The Challenge
Why This Material Is Demanding
Extreme hardness (9.5 Mohs)
Second only to diamond — causes fast wire wear and slow cutting with conventional methods.
Subsurface damage (SSD)
Blade and poor wire control leave SSD that drives polishing cost and yield loss.
Small kerf requirement
Expensive SiC means every micron of kerf is lost material and margin.
200 mm transition
The industry is scaling from 150 mm to 200 mm boules and wafers.
Our Solution
How Prominer CNC Approaches It
Endless Wire Saw (HXB Series)
High-speed endless loop wire, precision tension ±0.5 N and CNC multi-stage cutting for low SSD on 150/200 mm SiC.
Lab Wire Saw (HXV2020L-C)
R&D, 200 mm wafer development and university research with programmable angles.
Typical Parameters
Reference Cutting Window
| Parameter | Value |
|---|---|
| Wire diameter | 0.20–0.30 mm |
| Wire speed | 5–15 m/s |
| Feed rate | 0.1–0.3 mm/min |
| Wire tension | ±0.5 N |
| Typical kerf loss | 0.28–0.35 mm |
| Target SSD | <5 µm |
| Target surface Ra | <0.5 µm |
Proven Results
Real-World Outcomes
American SiC Device Maker
Kerf reduced 33% (180→120 µm), 96%+ yield.
$890K/yr Saved
Korean EV SiC Power Module
Yield improved 85%→95%, TTV below 5 µm.
Yield 95%
German SiC R&D Lab
200 mm wafer development, surface Ra below 0.5 µm.
Ra <0.5 µm
Cutting this material? Let’s benchmark it.
Send us a sample and we’ll run a free test cut and return optimal parameters plus a sample.