The Challenge
Why This Material Is Demanding
Ultra-thin wafer (130β180 Β΅m)
Breakage risk and yield loss demand precise tension and a low-speed finishing pass.
High kerf loss
Every micron of silicon saved converts directly to cost reduction.
Throughput demand
G12 (210 mm) wafers at scale require simultaneous multi-wafer cutting.
Wire breakage
Production downtime from tension loss β needs monitoring and auto feed.
Our Solution
How Prominer CNC Approaches It
Multi-Wire Saw
Highest throughput β slices multiple wafers simultaneously, roughly 4Γ a single-wire machine.
Silicon Rod Cutter / Endless Wire Saw
Ingot cropping and rod preparation feed the slicing line for a complete ingot-to-wafer flow.
Typical Parameters
Reference Cutting Window
| Parameter | Value |
|---|---|
| Wire diameter | 0.12β0.18 mm |
| Wire speed | 8β30 m/s |
| Feed rate | 0.3β1.0 mm/min |
| Wire tension | Β±0.5 N |
| Typical kerf loss | 0.15β0.25 mm |
| Target wafer thickness | 130β180 Β΅m |
| Target yield | >96% |
Proven Results
Real-World Outcomes
Indian PV Manufacturer
4Γ throughput boost, 98.5% yield.
$3.2M/yr Saved
Chinese 210 mm Solar
96.5% yield on G12 (210 mm) wafers.
96.5% Yield
German 130 Β΅m Silicon R&D
Ultra-thin wafer, breakage below 2%.
<2% Breakage
Cutting this material? Let’s benchmark it.
Send us a sample and we’ll run a free test cut and return optimal parameters plus a sample.